February 2020
Intermediate
146 pages
3h 54m
English
Marjan Asadiniaa; Hamid Sarbazi-Azadb a University of Arkansas, Fayetteville, AR, United Statesb Sharif University of Technology and Institute for Research in Fundamental Sciences (IPM), Tehran, Iran
Dynamic Random Access Memory (DRAM) has been the leading main memory technology during the last four decades. In deep submicron regime, however, scaling DRAM comes with several challenges caused by charge leakage and imprecise charge placement. Phase Change Memory (PCM) technology is known as one of the most promising technologies to replace DRAM. Compared to competitive non-volatile memories like NAND Flash, Spin Transfer Torque random-access memory (STT-RAM), Magnetoresistive ...
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