February 2020
Intermediate
146 pages
3h 54m
English
Marjan Asadiniaa; Hamid Sarbazi-Azadb azad@sharif.edu a University of Arkansas, Fayetteville, AR, United Statesb Sharif University of Technology and Institute for Research in Fundamental Sciences (IPM), Tehran, Iran
In this chapter, we first introduce one shifting mechanisms in order to further prolonging the lifetime of a phase change memory (PCM) device, reducing the write rate to PCM cells, and handling cell failures when hard faults occur. In this line, Byte-level Shifting Scheme (BLESS) is addressed and reduces write pressure over hot cells of blocks. Additionally, we illustrate that using the MLC capability of PCM and manipulating the data block ...
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