Book description
High Performance Silicon Imaging covers the fundamentals of silicon image sensors, with a focus on existing performance issues and potential solutions. The book considers several applications for the technology as well. Silicon imaging is a fast growing area of the semiconductor industry. Its use in cell phone cameras is already well established, and emerging applications include web, security, automotive, and digital cinema cameras.
Part one begins with a review of the fundamental principles of photosensing and the operational principles of silicon image sensors. It then focuses in on charged coupled device (CCD) image sensors and complementary metal oxide semiconductor (CMOS) image sensors. The performance issues considered include image quality, sensitivity, data transfer rate, system level integration, rate of power consumption, and the potential for 3D imaging. Part two then discusses how CMOS technology can be used in a range of areas, including in mobile devices, image sensors for automotive applications, sensors for several forms of scientific imaging, and sensors for medical applications.
High Performance Silicon Imaging is an excellent resource for both academics and engineers working in the optics, photonics, semiconductor, and electronics industries.
- Covers the fundamentals of silicon-based image sensors and technical advances, focusing on performance issues
- Looks at image sensors in applications such as mobile phones, scientific imaging, TV broadcasting, automotive, and biomedical applications
Table of contents
- Cover image
- Title page
- Copyright
- Contributor contact details
- Woodhead Publishing Series in Electronic and Optical Materials
-
Part I: Fundamentals
- 1. Fundamental principles of photosensing
-
2. Operational principles of silicon image sensors
- Abstract:
- 2.1 Introduction
- 2.2 Silicon phototransduction
- 2.3 Principles of charged coupled device (CCD) and complementary metal-oxide-semiconductor (CMOS) photosensing technologies
- 2.4 Metal-oxide-semiconductor-capacitor (MOS-C) structure-based photodetectors
- 2.5 p-n junction-based photodetectors
- 2.6 Noise considerations in pixel structures
- 2.7 High-performance pixel structures
- 2.8 Miniaturization and other development strategies followed in image sensor technologies
- 2.9 Hybrid and 3D detector technologies
- 2.10 Conclusion
- 2.11 References
- 3. Charge coupled device (CCD) image sensors
- 4. Backside illuminated (BSI) complementary metal-oxide-semiconductor (CMOS) image sensors
- 5. Circuits for high performance complementary metal-oxide-semiconductor (CMOS) image sensors
- 6. Smart cameras on a chip: using complementary metal-oxide-semiconductor (CMOS) image sensors to create smart vision chips
-
Part II: Applications
-
7. Complementary metal-oxide-semiconductor (CMOS) image sensors for mobile devices
- Abstract:
- 7.1 Introduction
- 7.2 Core image/video capture technology requirements and advances in mobile applications
- 7.3 Emerging complementary metal-oxide-semiconductor (CMOS) ‘sensor-embedded’ technologies
- 7.4 Mobile image sensor architecture and product considerations
- 7.5 Future trends
- 7.6 Conclusion
- 7.7 References
- 8. Complementary metal-oxide-semiconductor (CMOS) image sensors for automotive applications
- 9. Complementary metal-oxide-semiconductor (CMOS) image sensors for use in space
- 10. Complementary metal-oxide-semiconductor (CMOS) sensors for high-performance scientific imaging
- 11. Complementary metal-oxide-semiconductor (CMOS) sensors for fluorescence lifetime imaging (FLIM)
-
12. Complementary metal-oxide-semiconductor (CMOS) X-ray sensors
- Abstract:
- 12.1 Introduction
- 12.2 Intra-oral and extra-oral dental X-ray imaging
- 12.3 Medical radiography, fluoroscopy and mammography
- 12.4 CMOS image sensor (CIS)-based flat panel display (FPD) technology
- 12.5 Pixel design considerations for CMOS-based FPDs
- 12.6 Key parameters for X-ray sensors
- 12.7 X-ray sensors: types and requirements
- 12.8 Direct X-ray sensors
- 12.9 Conclusion and future trends
- 12.10 References
-
13. Complementary metal-oxide-semiconductor (CMOS) and charge coupled device (CCD) image sensors in high-definition TV imaging
- Abstract:
- 13.1 Introduction
- 13.2 Broadcast camera performance
- 13.3 Modulation transfer function (MTF), aliasing and resolution
- 13.4 Aliasing and optical low pass filtering
- 13.5 Opto-electrical matching and other parameters
- 13.6 Standards for describing the performance of broadcast cameras
- 13.7 Charge coupled device (CCD) and complementary metal-oxide-semiconductor (CMOS) image sensors used in broadcast cameras
- 13.8 Signal-to-noise ratio (SNR)
- 13.9 Bit size, pixel count and other issues
- 13.10 Three-dimensional and ultra high-defi nition (UHD) television
- 13.11 Conclusion
- 13.12 Sources of further information and advice
- 13.13 References
-
14. High-performance silicon imagers and their applications in astrophysics, medicine and other fields
- Abstract:
- 14.1 Introduction
- 14.2 Solid-state imaging detectors: principles of operation
- 14.3 Scientific imaging detectors
- 14.4 Readout structures
- 14.5 Photon counting detectors
- 14.7 Planetary and astronomy applications
- 14.8 Commercial applications of high-performance imaging detectors
- 14.9 Brief note on biological and medical applications
- 14.10 References and further reading
-
7. Complementary metal-oxide-semiconductor (CMOS) image sensors for mobile devices
- Index
Product information
- Title: High Performance Silicon Imaging
- Author(s):
- Release date: May 2014
- Publisher(s): Woodhead Publishing
- ISBN: 9780857097521
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