
162 Materials Processing by Cluster Ion Beams
same situation does not occur in the case of GCIB infusion
until much higher dopant concentration levels are reached.
Figure7.6 shows an example of retained B dose in Si versus
GCIB dose for an infusion doping process performed at 60keV
[5]. The retained B can be seen to have increased linearly with
the process dose up to a level of beyond 10
17
B atoms/ cm
2
.
7.2 Polyatomic Cluster Ion Implantation
Starting from the earliest development of production ion implan-
tation technology, many different boron compounds, such as
B
2
H
6
, B
2
N
3
H
6
, B
2
S
3
, BF
3
, BBr
3
, BI
3
, BCl
3
, HBO
2
, and B
10
H
14
,
1E+17
1E+18
1E+19
1E+20 ...