M
Magnetic fields, 417
interaction, 102–103
measurement, 46–49, 47t, 49f
Magnetic mechanisms, 314
Magnetic sensors, 131
Hall effect, 131–133, 132f, 134t
magneto resistance effect, 133–135
electron spin, 133–135
MR/Hall effect-based angle sensors, 138
through-shaft magnetic angle sensor, 139–147
signal conditioning circuit and sensor calibration, 144–147, 144f
variable reluctance–Hall effect-based angle sensor, 141–144, 141f
Magnetic tunnel junction (MTJ), 137
Magnetohydrodynamic flow effect, 360
Magnetometer, 396
MEMS magnetometer, 417–421 ...

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