Low-Voltage SOI CMOS VLSI Devices and Circuits

Index

α-particle, 283

γ-irradiation, 204

1/f frequency, 248

1OT SRAM, 302

2D

effect, 36

sidewall effect, 38

3D effect, 40

AC behavior, 147

Active body, 356

control, 354

Adder, 244, 321

full, 322

Adiabatic CMOS logic, 274

ALU, 319

Amplifier

class-A, 253

tuned, 361

Analog-to-digital converter (ADC), 228, 343, 333

flash, 343, 347

sigma-delta, 333

AND, 273

Annealing time, 204

Anomalous reverse conduction (ARC), 224

Auto-recovery, 232

Auxiliary transistor, 236

Back gate bias, 18, 24, 43, 117, 134, 199

Bandgap narrowing, 60

Base-width modulation, 381

Binary comparator, 324

Binary-weighted current source, 253

Bipolar embedded source structure (BESS), 61, 66

Bird's beak, 38, 43

Bit line (BL), 88, 291

Body

contact, 166, 206, 308

control technique, 238

current, 133

current clamper (BCC), 293

driven equalizer (BDEQ), 291

effect, 42, 234–235

fixed technique, 313

potential, 52

pulsed transistor logic (BPTL), 293

refresh, 286

voltage generator, 295

Body-emitter voltage, 195

Body-source voltage, 284

Body-synchronous sensing, 289

Bond and etch back (BESOI), 15, 140, 283

Boost circuit, 245

Boosted sense ground, 289

Booth encoder, 321

Breakdown, 80, 257

voltage, 80, 130, 157

Buried oxide, 13, 16, 15, 18, 20, 27–28

Cache memory, 269

Capacitance

coupling effect, 394

depletion, 74, 147

diffusion, 381

drain-gate, 147

front oxide, 147

gate-drain, 147

gate-source, 147

junction, 381

overlap, 335

parasitic, 228

source-gate, 147

substrate, 74

Capacitive coupling, 217, 219

Cany look ahead (CLA), 117, 275 ...