Mem-elements for Neuromorphic Circuits with Artificial Intelligence Applications

Chapter 19: Synaptic devices based on HfO₂ memristors

M.B. González^a; M. Maestro-Izquierdo^a; S. Poblador^a; M. Zabala^a; F. Campabadal^a; G. González-Cordero^b; S. Aldana^b; D. Maldonado^b; F. Jiménez-Molinos^b; J.B. Roldán^b    aInstitute of Microelectronics of Barcelona, IMB-CNM (CSIC), Bellaterra, Spain^bElectronics and Computer Technology Department, Science Faculty, Granada University, Granada, Spain

Abstract

Nanodevices based on resistive switching structures are currently being explored as potential candidates to mimic biological synapses in neuromorphic systems due to the analog control of the device resistance, their scaling capability, and their low power operation. In this chapter, the electronic properties and the conductance modulation capability ...