Appendix A

SPICE Model of Power MOSFETs

Figure A.1 shows a SPICE large-signal model for bapp01-math-0001-channel enhancement MOSFETs. It is a model of integrated MOSFETs, which can be adopted to power MOSFETs. SPICE parameters of the large-signal model of enhancement-type n-channel MOSFETs are given in Table A.1.

bapp01f001

Figure A.1 SPICE large-signal model for bapp01-math-0002-channel MOSFET.

Table A.1 Selected SPICE level 1 NMOS large-signal model parameters.

Symbol SPICE S. Model parameter Default value Typical value
bapp01-math-0014 VTO Zero-bias threshold voltage 0 V 0.3–3 V
bapp01-math-0015 KP Process constant bapp01-math-0016A/Vbapp01-math-0017 20–346 bapp01-math-0018A/Vbapp01-math-0019
Lambda Channel-length ...

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