Advances in Non-volatile Memory and Storage Technology

Index

A

ab initio calculations, 297

ab initio modelling

methodology of O_xRRAMs, 263–8

DFT-based, 264–5

DFT-based calculation methods to study Ox-RRAMs, 265–8

O_xRRAM optimization based on DFT, 276–82

physical concept for O_xRRAM based on DFT, 268–76

energetics and electronic structures of oxygen vacancy filaments, 269–73

physics of filament formation and disruption, 273–6

ABINIT software, 265

access device scaling, 342

ADALINE neural network, 392

adaptive multi-pulse program scheme, 96

adhesion force, 421, 425

All Bit Line (ABL) architecture, 77–8

All-Organic-Ferroelectric-Like Memory Transistor, 439

alternative memory storage concepts, 11–19

ferroelectric memories (FeRAM), 11–13

magnetoresistive memories (MRAM), 13–15

cell in 1MTJ/1 transistor ...