Contents
CHAPTER 1 INTEGRATED-CIRCUIT DEVICES AND MODELLING
1.1 Semiconductors and pn Junctions
1.1.4 Large-Signal Junction Capacitance
1.1.5 Forward-Biased Junctions
1.1.6 Junction Capacitance of Forward-Biased Diode
1.1.7 Small-Signal Model of a Forward-Biased Diode
1.2.1 Symbols for MOS Transistors
1.2.6 Low-Frequency Small-Signal Modelling in the Active Region
1.2.7 High-Frequency Small-Signal Modelling in the Active Region
1.2.8 Small-Signal Modelling in the Triode and Cutoff Regions
1.2.9 Analog Figures of Merit and Trade-offs
1.3.3 MOS Transistor Equations
1.4.3 Summary of Subthreshold and Mobility Degradation Equations
1.5 SPICE Modelling Parameters
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