Contents

CHAPTER 1        INTEGRATED-CIRCUIT DEVICES AND MODELLING

1.1        Semiconductors and pn Junctions

1.1.1        Diodes

1.1.2        Reverse-Biased Diodes

1.1.3        Graded Junctions

1.1.4        Large-Signal Junction Capacitance

1.1.5        Forward-Biased Junctions

1.1.6        Junction Capacitance of Forward-Biased Diode

1.1.7        Small-Signal Model of a Forward-Biased Diode

1.1.8        Schottky Diodes

1.2        MOS Transistors

1.2.1        Symbols for MOS Transistors

1.2.2        Basic Operation

1.2.3        Large-Signal Modelling

1.2.4        Body Effect

1.2.5        p-Channel Transistors

1.2.6        Low-Frequency Small-Signal Modelling in the Active Region

1.2.7        High-Frequency Small-Signal Modelling in the Active Region

1.2.8        Small-Signal Modelling in the Triode and Cutoff Regions

1.2.9        Analog Figures of Merit and Trade-offs

1.3        Device Model Summary

1.3.1        Constants

1.3.2        Diode Equations

1.3.3        MOS Transistor Equations

1.4        Advanced MOS Modelling

1.4.1        Subthreshold Operation

1.4.2        Mobility Degradation

1.4.3        Summary of Subthreshold and Mobility Degradation Equations

1.4.4        Parasitic Resistances

1.4.5        Short-Channel Effects

1.4.6        Leakage Currents

1.5        SPICE Modelling Parameters

1.5.1        Diode Model

1.5.2        MOS Transistors

1.5.3        Advanced SPICE Models of MOS Transistors

1.6        Passive Devices

1.6.1        Resistors

1.6.2        Capacitors

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