List of Contributors
- G. Ardila, IMEP-LAHC/Minatec, CNRS-Grenoble INP, UJF, 38016 Grenoble, France
- Francis Balestra, IMEP-LAHC, Minatec, Grenoble-Alpes University, 38016 Grenoble Cedex 1, France
- L. A. M. Barea, Department of Electrical Engineering, UFSCAR, São Carlos, SP 13565-905, Brazil
- J. P. H. Benschop, ASML, Veldhoven, The Netherlands
- D. A. Borton, School of Engineering and the Brown Institute for Brain Science, Brown University, Providence, RI 02912, USA
- C. Schulte-Braucks, Peter Grünberg Institut-9 and JARA-FIT, Forschungszentrum Jülich GmbH, 52425 Jülich, Germany
- D. Buca, Peter Grünberg Institut-9 and JARA-FIT, Forschungszentrum Jülich GmbH, 52425 Jülich, Germany
- S. Burger, Zuse Institute Berlin (ZIB), Takustraße 7, 14195 Berlin, Germany and JCMwave GmbH, Bolivarallee 22, 14050 Berlin, Germany
- A.V. Butenko, Department of Physics and Faculty of Engineering, Jack and Pearl Institute of Advanced Technology, Bar Ilan University, Ramat Gan 52900, Israel
- Kyung-Eun Byun, Device Laboratory, Samsung Advanced Institute of Technology, Suwon 443-803, South Korea
- Yeonchoo Cho, Device Laboratory, Samsung Advanced Institute of Technology, Suwon 443-803, South Korea
- J. K. Choi, Memory R&D Division, SK Hynix, Icheon-si, Gyeonggi-do 467-701, South Korea
- W. Crooijmans, Philips Research, High Tech Campus 34, Eindhoven, The Netherlands
- S. Datta, Department of Electrical Engineering, The Pennsylvania State University, University Park, PA 16802, USA and Department of Electrical ...
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