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Molecular Beam Epitaxy
book

Molecular Beam Epitaxy

by Hajime Asahi, Yoshiji Horikoshi
April 2019
Intermediate to advanced content levelIntermediate to advanced
512 pages
17h 52m
English
Wiley
Content preview from Molecular Beam Epitaxy

17III–V‐Based Magnetic Semiconductors and Spintronics Devices

Hiro Munekata

Tokyo Institute of Technology, Kanagawa, 226‐8503, Japan

17.1 Introduction

Ferromagnetism in semiconductors was studied systematically in the 1980s in a heavily p‐type, narrow‐gap IV–VI diluted magnetic semiconductor, (Pd,Sn,Mn)Te. In samples with Mn content of 0.005–0.09 [1,2], it was found that ferromagnetic order develops when holes start to occupy the heavy hole band at hole concentration p beyond 3 × 1020 cm−3, whereas ferromagnetic interaction is weakened for p values higher than 8 × 1020 cm−3. The entire behavior was explained successfully in terms of the Rudelman–Kittel–Kasuya–Yoshida (RKKY) interaction, originally derived to explain the behavior of magnetic impurities interacting with each other by polarizing conduction electrons in metals [3]. The work in ferromagnetic p‐(Pd,Sn,Mn)Te has given a strong motivation to pursue ferromagnetism in technologically important semiconductors based on group IV elements and III–V compounds.

In this chapter, we are concerned with ferromagnetism in III–V‐based diluted magnetic semiconductors (III–V‐DMS), especially those having narrow and middle band gaps. This class of semiconductor materials, as first demonstrated successfully by (In,Mn)As [4,5], contain a large amount of magnetic ions (1020–1021 cm−3) in the host crystals, despite its low equilibrium solubility limit. The work carried out for more than two decades has revealed that various transition‐metal elements ...

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Publisher Resources

ISBN: 9781119355014Purchase book