Molecular Beam Epitaxy

Preface

More than 50 years have passed since the first epitaxial growth of semiconductors was recognized by molecular beam epitaxy (MBE). During these decades, tremendous improvements have been made in the MBE apparatus itself and in‐situ evaluation methods. These improvements are directly connected to the quality of grown materials and devices created from them. Indeed, many brilliant results have been achieved, such as quantum well lasers, quantum cascade lasers, high electron mobility materials exceeding 10⁷ cm² V⁻¹ s⁻¹, to name but a few. Even now, these efforts are ongoing, and MBE therefore still attracts many researchers for investigations on new materials and new device applications.

In the last few decades, many books have been published on MBE related topics. Our book is distinguished from these by discussion not only of the fundamentals and state of the art of MBE technology, but also by discussion of new challenging research. We hope that this book will encourage young researchers and students to explore new fields of research and applications.

This book covers the fundamentals of MBE technology and science, and state‐of‐the‐art MBE technology for electronic and optoelectronic device applications. MBE research on magnetic semiconductor materials is also included for future magnetic and spintronic device applications. The book consists of the following five parts: I, Fundamentals of MBE; II, MBE Technology for Electronic Devices Application; III, MBE for Optoelectronic ...