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Molecular Beam Epitaxy
book

Molecular Beam Epitaxy

by Hajime Asahi, Yoshiji Horikoshi
April 2019
Intermediate to advanced content levelIntermediate to advanced
512 pages
17h 52m
English
Wiley
Content preview from Molecular Beam Epitaxy

23Applications of Bismuth‐Containing III–V Semiconductors in Devices

Masahiro Yoshimoto

Kyoto Institute of Technology, Sakyo, Kyoto, 606‐8585, Japan

23.1 Introduction

GaAs1−xBix is considered one of the highly mismatched alloys [1], which contain elements with significantly different sizes, electronegativities, and/or ionization energies such as GaAs1−xNx [1], GaNxP1−x [2], and ZnO1−xSex [3]. One of the most notable characteristics of highly mismatched alloys is a large bandgap bowing, as shown in Figure 23.1 [48]. The observed sharp decrease in the bandgap is due to an increase in the Bi composition and the N composition, and can be described quantitatively by the band anti‐crossing (BAC) model [ 1,9]. In the BAC model, the narrow bandgap of GaNxAs1−x arises due to resonance between the N atom level and the conduction band of GaAs [1]. In the case of GaAs1−xBix, the narrow bandgap is due to the level of Bi atom resonating with the valence band of GaAs (inset of Figure 23.1) [9]. Highly mismatched alloys of GaAs1−xBix and related semiconductors allow high flexibility in bandgap engineering and the modification of the band structure, resulting in materials with a temperature‐insensitive bandgap [10] or a large energy difference (Δso) between the valence band and the split‐off band (inset of Figure 23.1) [11]. Further, quaternary alloys of GaNyAs1−xyBix and InyGa1−yAs1−xBix are narrow bandgap semiconductors which are lattice‐matched to GaAs and InP, respectively.

Figure 23.1 ...

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Publisher Resources

ISBN: 9781119355014Purchase book