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Molecular Beam Epitaxy
book

Molecular Beam Epitaxy

by Hajime Asahi, Yoshiji Horikoshi
April 2019
Intermediate to advanced content levelIntermediate to advanced
512 pages
17h 52m
English
Wiley
Content preview from Molecular Beam Epitaxy

25MBE Growth and Device Applications of Ga2O3

Masataka Higashiwaki

National Institute of Information and Communications Technology, Tokyo, 184‐8795, Japan

25.1 Introduction

Research and development on novel semiconductor materials is often motivated by requirements for new devices that may lead to not only the realization of new systems, but also improvements in the existing system performance. Owing to constant demands for power conversion to be ever more efficient, gallium oxide (Ga2O3) has attracted great attention as an emerging semiconductor due to its unique material properties, derived from an extremely large bandgap. However, Ga2O3 is by no means a new material from a historical point of view. With techniques to synthesize bulk single crystals, the crystal structures and material properties of Ga2O3 had already been studied in the 1950s–1960s [1,2]. Some melt growth and epitaxial thin‐film growth technologies for Ga2O3 were developed before the 1990s. In spite of this vast body of groundwork, Ga2O3 has remained largely unknown for a long while, in contrast to other wide‐bandgap materials such as SiC, GaN, and diamond.

25.2 Physical Properties of Ga2O3

25.2.1 Polymorphs

As is commonly the case with oxide semiconductors, Ga2O3 exhibits polymorphism with five types of polymorphs, labeled α, β, γ, δ, and ɛ [1]. The majority of research efforts have been devoted to the most stable monoclinic β‐Ga2O3, since its bulk single crystals can be synthesized by melt growth methods, as will ...

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Publisher Resources

ISBN: 9781119355014Purchase book