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Molecular Beam Epitaxy
book

Molecular Beam Epitaxy

by Hajime Asahi, Yoshiji Horikoshi
April 2019
Intermediate to advanced content levelIntermediate to advanced
512 pages
17h 52m
English
Wiley
Content preview from Molecular Beam Epitaxy

22Molecular Beam Epitaxial Growth of Topological Insulators

Xiao Feng Ke He Xucun Ma and Qi‐Kun Xue

State Key Laboratory of Low‐Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing, 100084, China

22.1 Introduction

Molecular beam epitaxy (MBE) has sparked a veritable explosion of materials research since its invention in the late 1960s. Owing to its ability to accurately control film thickness and chemical composition, this technique has been widely used in growing high‐quality semiconductor films and heterostructures. In the past several years, MBE has also been proved to be an ideal method of preparing topological insulator (TI) films and engineering their electronic and magnetic properties.

A TI has a bulk bandgap and gapless surface states protected by time‐reversal symmetry (TRS) [111]. In momentum space, topological surface states usually have Dirac‐cone‐shaped band dispersion and are spin‐polarized except at some high‐symmetric points of the surface Brillouin zone. An ideal TI material has the Fermi level (EF) residing in the bulk gap and only intersecting the topological surface states. Such a material can show the unique properties and quantum phenomena of the topological surface states. However, most TI materials are narrow‐gap chalcogenide semiconductors [ 13], which are usually vulnerable to the formation of vacancies and anti‐site defects. The defects can heavily charge‐dope TI materials, making them degenerate semiconductors with EF lying ...

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ISBN: 9781119355014Purchase book