Book description
This book covers the latest high-speed data rate connectivity technologies, discusses THz sensing and imaging devices based on nano devices and materials, describes SOI multigate nanowire FETs, and explains the theory underpinning nanoscale nanowire MOSFETs, simulation methods, and their results. It explores the physics of the SiGe heterojunction bipolar transistor (HBT), as well as commercially available SiGe HBT devices and their applications. It also details aspects of THz IC design using Si CMOS devices, including experimental setups for measurements, detection methods, and more.
Table of contents
- Cover
- Half Title
- Title Page
- Copyright Page
- Table of Contents
- Preface
- About the Editor
- Contributors
- Chapter 1 Terahertz Technology Based on Nano-Electronic Devices
- Chapter 2 Ultimate Fully Depleted (FD) SOI Multigate MOSFETs and Multibarrier Boosted Gate Resonant Tunneling FETs for a New High-Performance Low-Power Paradigm
- Chapter 3 SiGe BiCMOS Technology and Devices
- Chapter 4 SiGe HBT Technology and Circuits for THz Applications
- Chapter 5 Multiwavelength Sub-THz Sensor Array with Integrated Lock-In Amplifier and Signal Processing in 90 nm CMOS Technology
- Chapter 6 40/100 GbE Physical Layer Connectivity for Servers and Data Centers
- Chapter 7 Equalization and Multilevel Modulation for Multi-Gbps Chip-to-Chip Links
- Chapter 8 25 G/40 G SerDes: Need, Architecture, and Implementation
- Chapter 9 Clock and Data Recovery Circuits
- Index
Product information
- Title: High-Speed Devices and Circuits with THz Applications
- Author(s):
- Release date: September 2017
- Publisher(s): CRC Press
- ISBN: 9781351831574
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