2 Ultimate Fully Depleted (FD) SOI Multigate MOSFETs and Multibarrier Boosted Gate Resonant Tunneling FETs for a New High-Performance Low-Power Paradigm
Aryan Afzalian
CONTENTS
2.2 Gate Coupling Optimization in Nanoscale Nanowire MOSFETs: Electrostatic vs. Quantum Confinement
2.3.1 Influence of Barrier Width
As transistors are scaled down in the nanoscale regime, quantum effects are playing a crucial role in device performance and parameters. Also, scaling alone is not sufficient to achieve performance improvement, and new boosters and device concepts are needed. For instance, the trade-off between power and performance in electronics ...
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