2   Ultimate Fully Depleted (FD) SOI Multigate MOSFETs and Multibarrier Boosted Gate Resonant Tunneling FETs for a New High-Performance Low-Power Paradigm

Aryan Afzalian


2.1   Simulation Algorithm

2.2   Gate Coupling Optimization in Nanoscale Nanowire MOSFETs: Electrostatic vs. Quantum Confinement

2.3   Physics of RTFET

2.3.1   Influence of Barrier Width

2.4   SB RT-FET

2.5   Conclusions



As transistors are scaled down in the nanoscale regime, quantum effects are playing a crucial role in device performance and parameters. Also, scaling alone is not sufficient to achieve performance improvement, and new boosters and device concepts are needed. For instance, the trade-off between power and performance in electronics ...

Get High-Speed Devices and Circuits with THz Applications now with the O’Reilly learning platform.

O’Reilly members experience books, live events, courses curated by job role, and more from O’Reilly and nearly 200 top publishers.