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Semiconductor Diodes and Transistors

Tiago Davi C. Busarello    Federal University of Santa Catarina, Santa Catarina, BrazilMarcelo G. Simões    Colorado School of Mines, Golden, CO, United StatesJosé A. Pomilio    University of Campinas, Campinas, Brazil

Abstract

This chapter covers the fundamental concepts of diodes and transistor devices. The PN junction will be briefly described. Power bipolar transistors, power metal-oxide-semiconductor field-effect transistors (MOSFETs), and insulated gate bipolar transistors (IGBTs) will be covered in details. The understanding of their physical structure, their static and dynamic characteristics, their switching features, and some applications of them are presented. PSPICE models for these devices ...

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