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SiC and GaN Power Semiconductor Devices

Tanya K. Gachovska    Senior Verification Engineer, Solantro Semiconductor Corp., Ottawa, ON, CanadaJerry L. Hudgins    University of Nebraska-Lincoln, Lincoln, NE, United States

Abstract

Wide bandgap semiconductors such as SiC and GaN have drawn a lot of attention in power applications due to their superior material properties such as high critical electric field resulting in a minimum of 10 times higher breakdown voltage or a 100 times smaller on-resistance than Si. Additionally, SiC has a thermal conductivity which is approximately three times higher than Si. These unique properties of SiC and GaN materials have made them promising candidates for future high power, high frequency semiconductor ...

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