September 2017
Intermediate to advanced
1522 pages
83h 42m
English
A GaN HEMT is a field-effect transistor in which two layers of different bandgaps and polarizations (GaN and AlGaN) are grown upon one another forming a heterojunction. As a consequence, in the vicinity of the heterojunction, positive charge is induced at the interface due to both spontaneous and piezoelectric type of polarization. Free electrons are transferred from the AlGaN layer, having higher conduction band energy, to the GaN layer, where the conduction band energy is lower, thus occupying a lower energy state and compensating for the induced positive charge [178]. The number of electrons is larger, especially if AlGaN is doped with impurities. Accumulated electrons along the heterojunction ...
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