5.3.4 SiC JFET
The SiC JFET has some benefits, such as a resistive forward characteristic in the first and third quadrants and a monolithic integrated body diode. It is comparable with available SiC Schottky diodes in terms of stored charge, low output capacitance, low gate charge, and low switching losses that makes it attractive for use.
The first commercialized SiC transistor was normally the ON JFET from SemiSouth Laboratories and SiCED Electronics Development. They were easy to implement as there were no reliability issues with gate oxide as with SiC MOSFETs. The JFETs are only depletion-mode, normally ON-type devices that conduct current at zero gate voltage and are fully blocked when the gate voltage is below the pinch-off voltage. ...
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