Wafer Manufacturing

Index

• a
• abrasive grits  77, 89, 91–93, 162
• abrasive machining 74–76
  • bonded abrasive machining (BAM)  75
  • free abrasive machining (FAM)  75–76
• abrasive materials  205
  • aluminum oxide  82
  • boron carbide  82
  • grain size  77–78
  • diamond  82
  • hardness of  78–80
  • silicon carbide  81
• abrasive sizes  77–80, 205
• abrasive slurry
  • composition of  89–90
  • recycling of  91–93
  • water vs. glycol  90–91
• acid etching  64, 232
• aluminum oxide  82
• American National Standards Institute (ANSI)  77
• arithmetic mean roughness  23
• average maximum height  24

• b
• back lapping  205
• back thinning processes  205
• batched surface grinding methods  225
• batch wafer holder
  • prismatic type of  225
  • revolute type of  225
• bi‐directional wire motion  110–113
• black silicon carbide  81
• Blanchard type grinding  225
• blue brittleness  173
• bonded abrasive machining (BAM)
  • abrasive machining  75
  • lapping  201
• bonded abrasive polishing  218
• boron carbide  82
• bow  14
• Bridgman–Stockbarger growth  46–48
• brittle materials  71–73
  • brittle machining  73–74
  • ductile vs. brittle machining  73–74
  • opportunity and future research  83–84
  • research on ductile machining and challenges  83
• brush scrubbing  237
• bulk crystal growth  209
• bulk defects  252–253

• c
• carrier fluid  89–81, 162
• casting polycrystalline crystal  51
• caustic etching  232
• center thickness (CTK)  91
• centrifugal spray cleaning  240
• charge of silicon  41
• chemical mechanical polishing (CMP)  209–221
  • challenges of  215
  • edge polishing
    • challenges of  218–219
    • fundamentals ...