November 2014
Intermediate to advanced
400 pages
21h 11m
English
Content preview from Fundamentals of Silicon Carbide Technology
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Index
- (11
0) - (1
00) - A face
- ab-initio calculation
- above-gap excitation
- absorption
- coefficient
- depth
- edge
- AC motor (or motor drive)
- accelerometer
- acceptor-like state
- accumulation-layer FET (ACCUFET)
- Acheson process
- activation (of dopants)
- airbridge
- Al/Ti contact
- alphabet line
- ambipolar
- diffusion coefficient (DA)
- diffusion equation (ADE)
- diffusion length (LA)
- lifetime (τA)
- amorphization
- Ampere's law
- amphoteric impurity
- anisotropy
- of breakdown electric field
- of mobility
- annealing
- hydrogen
- in-situ
- metallization
- nitridation
- POCl3
- post-implantation
- post-metallization
- post-oxidation (POA)
- rapid thermal (RTA)
- re-oxidation
- anode shorts (in a thyristor)
- anodic oxidation
- anti-phase domain
- anti-site defect
- armature flux (of a motor)
- asymmetrical IGBT
- asynchronous (induction) motor (or motor drive)
- atomic force microscopy (AFM)
- Auger recombination
- avalanche breakdown
- avalanche multiplication
- avalanche photodiode
- avalanche region
- in an avalanche photodiode (APD)
- in an IMPATT diode
- back-emf (in a motor)
- Baliga's figure-of-merit
- band (also energy band)
- conduction band minima
- diagram
- offset
- structure
- surface band bending
- bandgap
- energy
- narrowing
- temperature dependence of
- barrier height
- for injection into SiO2
- inhomogeneity
- metal-semiconductor (Schottky)
- lowering of (Schottky ...
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I'm always learning. So when I got on to O'Reilly, I was like a kid in a candy store. There are playlists. There are answers. There's on-demand training. It's worth its weight in gold, in terms of what it allows me to do.