Integrated Circuit Design for Radiation Environments

Index

• a
• alpha particle
  • electron hole pair (EHP) generation  87, 150–152, 153, 159–160, 161–163, 164
  • soft error rate (SER)  149, 161, 293
  • thorium series  149, 150–151, 163
  • uranium series  149, 150–151
• analog design  1, 158, 159
• application specific integrated circuit (ASIC)  309
• avalanche breakdown  276, 281–282
• avalanche multiplication  146

• b
• ballast resistors,
• bipolar junction transistor (BJT)  12, 17, 20–21, 24, 78, 125, 131, 146, 147, 155, 159, 179, 186, 193, 214, 224, 230, 232, 242, 339
• buried guard ring (BGR)  254, 270, 272–273, 340

• c
• cosmic rays
  • gamma  175–176, 195
  • muons  70, 149–150, 152–153
  • neutrino  70
  • neutrons  66, 69–71, 149–150, 153, 160
  • pions  70, 149–150, 152–153
  • positrons  70, 149–150
  • protons  23, 65, 66, 70, 149–150, 153–154, 160, 183
• critical charge  71, 148–149, 293, 296, 301, 334
• cross section
  • saturated cross section  145

• d
• diode  20, 78, 198, 201, 211, 219, 224–225, 234, 253, 259, 284, 313, 337, 338
• dose  21–22, 55, 70, 74–75, 77–78, 85, 129–131, 133, 173–182, 192–193, 195–201, 220–221, 225, 228, 231–234, 236–237, 242, 254, 262, 266–267, 270–271, 284, 286
• dynamic read access memory (DRAM)  143, 148, 161, 165, 182, 277, 293–296, 333–335

• e
• electrical safe operating area (E‐SOA),

• g
• gamma rays  5, 31, 33, 53–54, 72–73, 76–77, 85–86, 101, 104, 106–107, 174–182, 193–195, 200, 229

• h
• hard error  146
  • destructive  185
• heavily doped buried layer (HDBL)
  • Buried Guard Ring  270
  • latchup  270–271
• heavy ion