
318 MICROWAVE DIODE GENERATORS
METALLIC ELECTRODE~
N +
N-
N+
METALLIC ELECTRODE
AND MOUNTING
PEDASTAL
(A)
X = L ",
X=O
ACTIVE
REGION
C
0
-R
II
Ls
(B)
~; R s
Figure 16-4
A) Gunn
diode structure;
B) equivalent circuit.
frequencies to 100 GHz and pulsed power levels to several hundred watts (1%
duty cycle) have been achieved.
Figure 16-4A shows a diagram for a Gunn diode, while an equivalent circuit
is shown in Fig. 16-4B. The active region of the diode is usually 6 to
18/~m
long.
The N+ end regions are ohmic materials of very low resistivity (0.001/~-cm) and are
I to 2/~m thick. The function of the N+ regions is to form ...