Integrated Microsystems

22High-Speed Si/Ge-Based Photodiodes for Optical Interconnect Applications

J.W. Shi

F.M. Kuo

CONTENTS

1. 22.1 Introduction
2. 22.2 Si-Based High-Speed PDs: 850 nm Wavelength
   1. 22.2.1 The Fundamental Problems with Si-Based High-Speed PDs
   2. 22.2.2 Spatial Modulation Si-Based PDs at 850 nm Wavelength
   3. 22.2.3 Si-Based High-Speed Avalanche PDs that Operate at the 850 nm Wavelength
3. 22.3 Germanium and Ge/Si-Based High-Speed Photodiodes for 1.3–1.55 μm Wavelength Operation
   1. 22.3.1 The Fundamental Problems of Ge and Ge/Si-Based High-Speed PDs
   2. 22.3.2 High-Speed Ge-Based PDs
   3. 22.3.3 High-Speed Selective-Area Growth on Ge-on-Si-Based PDs
   4. 22.3.4 Ge-on-Insulator (GOI) and SOI-Based PDs
4. 22.4 Conclusion
5. References

22.1 Introduction

Owing to the ever-increasing need ...