book

Semiconductor Devices: Physics and Technology, 3rd Edition

by Simon M. Sze, Ming-Kwei Lee

May 2012

Intermediate to advanced

592 pages

21h 7m

English

Wiley

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WHAT'S NEW IN THE THIRD EDITIONTOPICAL COVERAGEKEY FEATURESCOURSE DESIGN OPTIONSTEXTBOOK SUPPLEMENTS
0.1 SEMICONDUCTOR DEVICES0.2 SEMICONDUCTOR TECHNOLOGYSUMMARYREFERENCES
1.1 SEMICONDUCTOR MATERIALS1.2 BASIC CRYSTAL STRUCTURES1.3 VALENCE BONDS1.4 ENERGY BANDS1.5 INTRINSIC CARRIER CONCENTRATION1.6 DONORS AND ACCEPTORSSUMMARYREFERENCESPROBLEMS (* DENOTES DIFFICULT PROBLEMS)

2.1 CARRIER DRIFT2.2 CARRIER DIFFUSION2.3 GENERATION AND RECOMBINATION PROCESSES2.4 CONTINUITY EQUATION2.5 THERMIONIC EMISSION PROCESS2.6 TUNNELING PROCESS2.7 SPACE-CHARGE EFFECT2.8 HIGH-FIELD EFFECTSSUMMARYREFERENCESPROBLEMS (* DENOTES DIFFICULT PROBLEMS)
3.1 THERMAL EQUILIBRIUM CONDITION3.2 DEPLETION REGION3.3 DEPLETION CAPACITANCE3.4 CURRENT-VOLTAGE CHARACTERISTICS3.5 CHARGE STORAGE AND TRANSIENT BEHAVIOR3.6 JUNCTION BREAKDOWN3.7 HETEROJUNCTIONSUMMARYREFERENCESPROBLEMS (* DENOTES DIFFICULT PROBLEMS)
4.1 TRANSISTOR ACTION4.2 STATIC CHARACTERISTICS OF BIPOLAR TRANSISTORS4.3 FREQUENCY RESPONSE AND SWITCHING OF BIPOLAR TRANSISTORS4.4 NONIDEAL EFFECTS4.5 HETEROJUNCTION BIPOLAR TRANSISTORS4.6 THYRISTORS AND RELATED POWER DEVICESSUMMARYREFERENCESPROBLEMS (* INDICATES DIFFICULT PROBLEMS)
5.1 IDEAL MOS CAPACITOR5.2 SIO 2 -SI MOS CAPACITOR5.3 CARRIER TRANSPORT IN MOS CAPACITORS5.4 CHARGE-COUPLED DEVICES (CCD)5.5 MOSFET FUNDAMENTALSSUMMARYREFERENCESPROBLEMS (* DENOTES DIFFICULT PROBLEMS)
6.1 MOSFET SCALING6.2 CMOS AND BiCMOS6.3 MOSFET ON INSULATOR6.4 MOS MEMORY STRUCTURES6.5 POWER MOSFETSUMMARYREFERENCESPROBLEMS (* DENOTES DIFFICULT PROBLEMS)
7.1 METAL-SEMICONDUCTOR CONTACTS7.2 MESFET7.3 MODFETSUMMARYREFERENCESPROBLEMS (* DENOTES DIFFICULT PROBLEMS)
8.1 MICROWAVE FREQUENCY BANDS8.2 TUNNEL DIODE8.3 IMPATT DIODE8.4 TRANSFERRED-ELECTRON DEVICES8.5 QUANTUM-EFFECT DEVICES8.6 HOT-ELECTRON DEVICESSUMMARYREFERENCESPROBLEMS (* DENOTES DIFFICULT PROBLEMS)
9.1 RADIATIVE TRANSITIONS AND OPTICAL ABSORPTION9.2 LIGHT-EMITTING DIODES9.3 VARIOUS LIGHT-EMITTING DIODES9.4 SEMICONDUCTOR LASERSSUMMARYREFERENCESPROBLEMS (* DENOTES DIFFICULT PROBLEMS)
10.1 PHOTODETECTORS10.2 SOLAR CELLS10.3 SILICON AND COMPOUND-SEMICONDUCTOR SOLAR CELLS10.4 THIRD-GENERATION SOLAR CELLS10.5 OPTICAL CONCENTRATIONSUMMARYREFERENCESPROBLEMS (* DENOTES DIFFICULT PROBLEMS)
11.1 SILICON CRYSTAL GROWTH FROM THE MELT11.2 SILICON FLOAT–ZONE PROCESS11.3 GaAs CRYSTAL-GROWTH TECHNIQUES11.4 MATERIAL CHARACTERIZATION11.5 EPITAXIAL-GROWTH TECHNIQUES11.6 STRUCTURES AND DEFECTS IN EPITAXIAL LAYERSSUMMARYREFERENCESPROBLEMS (* DENOTES DIFFICULT PROBLEMS)
12.1 THERMAL OXIDATION12.2 CHEMICAL VAPOR DEPOSITION OF DIELECTRICS12.3 CHEMICAL VAPOR DEPOSITION OF POLYSILICON12.4 ATOMIC LAYER DEPOSITION12.5 METALLIZATIONSUMMARYREFERENCESPROBLEMS (* DENOTES DIFFICULT PROBLEMS)
13.1 OPTICAL LITHOGRAPHY13.2 NEXT-GENERATION LITHOGRAPHIC METHODS13.3 WET CHEMICAL ETCHING13.4 DRY ETCHINGSUMMARYREFERENCESPROBLEMS (* DENOTES DIFFICULT PROBLEMS)
14.1 BASIC DIFFUSION PROCESS14.2 EXTRINSIC DIFFUSION14.3 DIFFUSION-RELATED PROCESSES14.4 RANGE OF IMPLANTED IONS14.5 IMPLANT DAMAGE AND ANNEALING14.6 IMPLANTATION-RELATED PROCESSESSUMMARYREFERENCESPROBLEMS (* DENOTES DIFFICULT PROBLEMS)
15.1 PASSIVE COMPONENTS15.2 BIPOLAR TECHNOLOGY15.3 MOSFET TECHNOLOGY15.4 MESFET TECHNOLOGY15.5 CHALLENGES FOR NANOELECTRONICSSUMMARYREFERENCESPROBLEMS (* DENOTES DIFFICULT PROBLEMS)