May 2012
Intermediate to advanced
592 pages
21h 7m
English
14
14.3 DIFFUSION-RELATED PROCESSES
14.5 IMPLANT DAMAGE AND ANNEALING
Impurity doping is the introduction of controlled amounts of impurity dopants into semiconductor materials. The practical use of impurity doping is primarily to change the electrical properties of the semiconductors. Diffusion and ion implantation are the two key methods of impurity doping. Until the early 1970s, impurity doping was done mainly by diffusion at elevated temperatures, as shown in Fig. 1a. In this method the dopant atoms are placed on or near the surface of the ...
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