Silicon Photonics: Fundamentals and Devices

Appendix B: Values of Parameters

Table B.1 Values of parameters.

Table B.2 Parameters for calculation of strain in SiGeSn.

References

1. Madelung, O., Schultz, M., and Weiss, H. (eds) (1982) Physics of Group IV Elements and III-V Compounds, vol. 17a, 1st edn, Springer-Verlag, NY.

2. Reiger, M.M. and Vogl, P. (1993) Electronic band parameters in strained Si_1−x alloys on Si_1−yGe_y substrates. Phys. Rev. B, 48, 14276–14287.

3. Jaros, M. (1988) Simple analytic model for heterojunction band offsets. Phys. Rev. B, 39, 7112–7114.

4. Menendez, J. and Kouvetakis, J.J. (2004) Type I Ge/Ge_1−x−ySi_xSn_y strained layer heterostructures with a direct Ge bandgap. Appl. Phys. Lett., 85, 1175–1177.