Skip to Main Content
Principles of Analog Electronics
book

Principles of Analog Electronics

by Giovanni Saggio
January 2014
Intermediate to advanced content levelIntermediate to advanced
567 pages
23h 13m
English
CRC Press
Content preview from Principles of Analog Electronics
Semiconductor Components
303
The MOS type transistor is based on the modulation of the charge concentra-
tions in the semiconductor region below the layer of oxide of the gate, thanks to a
voltage applied to the gate terminal above the oxide.
In the case of a p−type semiconductor (with hole density equal to N
A
) a posi-
tive voltage V
G
applied to the gate reduces the concentration of holes in the semi-
conductor under the oxide, and increases the concentration of electrons. For a
sufciently high value of V
G
, the concentration of negative charge carriers below
the gate exceeds that of positive charges, and the so-called inversion layer is
formed. ...
Become an O’Reilly member and get unlimited access to this title plus top books and audiobooks from O’Reilly and nearly 200 top publishers, thousands of courses curated by job role, 150+ live events each month,
and much more.
Start your free trial

You might also like

Digital Electronics

Digital Electronics

Betty Lincoln
Analog Circuit Design

Analog Circuit Design

Bob Dobkin, Jim Williams
Basic Electronics

Basic Electronics

Debashis De, Kamakhya Prasad Ghatak

Publisher Resources

ISBN: 9781466582026