Magnetic Nano- and Microwires

16

Oxide nanowires for nonvolatile memory applications

K. Nagashima; T. Yanagida    Osaka University, Osaka, Japan

Abstract

Nanowires provide unique tools for scaling down in semiconductor electronics and the fundamental understanding of nanoscale physical phenomena, which are not accessible in conventional lithography. Resistive random access memory (ReRAM) is an emergent concept in nonvolatile memory to overcome the limitations of flash memory technology; however, its potential scalability and the fundamental nanoscale mechanism have been controversial. This chapter reviews oxide nanowire-based ReRAM. The oxide nanowire allows for ultrasmall device architecture such as a segmented memory cell in a single nanowire and a cross-bar memory cell ...