is known as the reverse recovery time and it varies
generally (between 10 ns to over 1 microsecond) for different diodes. This time is also
known as the storage time because it is the time that is taken to sweep out the excess
charge Q
RR
from the silicon by the reverse current. Q
RR
is a function of I
D
I
1
, di
D
/ dt
and the junction temperature. It has an effect on the reverse recovery dt current I
RR
and
the reverse recovery time t
rr
, so it is usually quoted in the data sheets. The fall time t
f
can be infl uenced by the design of the diode. ...
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