MOSFETs have become increasingly important in discrete power device applications due
primarily to their high input impedance, rapid switching times, and low on-resistance.
However, the on-resistance of such devices increases with increasing drain-source voltage
capability, thereby limiting the practical value of power MOSFETs to application below a
few hundred volts.
To make use of the advantages of power MOSFETs and BJTs together a newer device,
insulated gate bipolar transistor (IGBT), has been introduced recently. With the voltage-
controlled gate ...
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