c on-resistance at high voltage than any other gate-driven
technology.
That is, just as the IGBT operates at a higher current density than the DMOSFET, the
MCT (like all thyristors) operates at even higher current densities. In the future, the
ultimate power switch may well be the MOS-controlled thyristor (MCT). References 16
to 20 provide details for designers.
References
[1] Ashkianazi , G. , J. Lorch , and M. Nathan . “ Ultrafast GaAs Power Diodes Provide
Dynamic Characteristics with Better Temperature Stability than Silicon Diodes. ”
PCIM ...
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