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Chapter 7
To increase speed, materials with faster carrier mobility are needed. Gallium arsenide
(GaAs) has a carrier mobility which is fi
ve times that of silicon (Delaney, Salih, and
Lee 1995). Since Schottky technology for silicon devices is diffi cult to produce at
voltages above 200 V, development has focused on GaAs devices with ratings of 180 V
and higher. The advantages realized by using GaAs rectifi ers include fast switching and
reduced reverse recovery related parameters. An additional benefi t is the variation of
parameters with temperature is much less than silicon rectifi ers.
For example, Motorola ’ s 180 V and ...