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The IGBT Device
book

The IGBT Device

by B. Jayant Baliga
March 2015
Intermediate to advanced
732 pages
22h 32m
English
William Andrew
Content preview from The IGBT Device

3.7. Summary

Although many structural variations of the IGBT have been proposed since its first introduction in the early 1980s, they can be broadly classified into symmetric blocking and asymmetric blocking devices. In this chapter, it is demonstrated that the design of these structures begins by defining the parameters of the drift region to enable the device to support the desired voltage in the blocking mode. The thickness and doping concentration of the drift region of the IGBT is determined by open-base transistor breakdown physics. For the symmetric blocking device structure, a minimum drift region thickness occurs at an optimum doping concentration for the drift region. This produces the best on-state voltage drop and switching energy ...
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Publisher Resources

ISBN: 9781455731534