Synopsis
Abstract
The state-of-the-art for insulated gate bipolar transistor (IGBT) products is described. Devices have been optimized for blocking voltages ranging from 600 to 6500 V. The operating current density for the silicon IGBTs is quantified for each blocking voltage capability. The advent of wide band gap semiconductor power devices is discussed as a competitor to the silicon IGBT. The derivation of the Baliga's figure-of-merit is discussed. The development of silicon carbide power devices is described. State-of-the-art SiC power Metal Oxide Semiconductor Field Effect Transistor (MOSFET) performance is documented. A cost analysis is presented for SiC power MOSFETs to allow comparison with silicon IGBTs. It is concluded that ...
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