March 2015
Intermediate to advanced
732 pages
22h 32m
English
The MOS-gate structure of the insulated gate bipolar transistor (IGBT) simplifies the gate drive requirements. Starting with the basic gate drive circuit, this chapter introduces more complex drive strategies such as the asymmetric gate drive, the two-stage gate drive, the active gate drive, the variable resistance gate drive, and the digital gate drive. The IGBT gate drive approach can be tailored to reduce its switching losses.
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