Chapter 7

Gate Drive Circuit Design

Abstract

The MOS-gate structure of the insulated gate bipolar transistor (IGBT) simplifies the gate drive requirements. Starting with the basic gate drive circuit, this chapter introduces more complex drive strategies such as the asymmetric gate drive, the two-stage gate drive, the active gate drive, the variable resistance gate drive, and the digital gate drive. The IGBT gate drive approach can be tailored to reduce its switching losses.

Keywords

Active gate drive; Asymmetric gate drive; Digital gate drive; Gate drive; Two-stage gate drive; Variable resistance gate drive
The success of the insulated gate bipolar transistor (IGBT) as a widely used power switch for a large variety of applications is not only due to ...

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