March 2015
Intermediate to advanced
732 pages
22h 32m
English
The insulated gate bipolar transistor (IGBT) chip must be protected by placing it inside a package. After a discussion of discrete device packaging, various approaches to building multichip IGBT modules are discussed including the flat-pack, press-pack cases. The thermal resistance of various approaches is provided. Smart power modules are described that combine the IGBT chips with their drive and protection circuits. The reliability and failure mechanisms of IGBT modules are discussed including problems created by thermal cycling. Wire bond liftoff and formation of solder voids are the major issues determining reliability.
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