May 2015
Intermediate to advanced
790 pages
37h 28m
English
Content preview from Electronic Engineering and Information Science
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Electronic Engineering and Information Science – Wang (Ed.)
© 2015 Taylor & Francis Group, London, ISBN: 978-1-138-02772-5
The numerical analyze the change of gate length for the influence of organic
static induction transistor potential distribution inside the conducting channel
Y. Zhang, D.X. Wang, Y. Yuan & X.Y. Cui
Key Laboratory of Engineering Dielectrics and Its Application, Department of Electronic Science and Technology,
College of Applied Science, Harbin University of Science and Technology, Heilongjiang, Harbin, China
ABSTRACT: According to the actual Organic Static Induction Transistor (OSIT) establishing OSIT’s phys-
ical model and selecting appropriate structure parameter, calculate the electric potential numerical value of
OSIT ...
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