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Electronic Engineering and Information Science – Wang (Ed.)
© 2015 Taylor & Francis Group, London, ISBN: 978-1-138-02772-5
The characteristics analysis of ZnO thin films transistor
X.Y. Wang, Y.S. Zhang & D.X. Wang
Key Laboratory of Engineering Dielectrics and Its Application, College of Applied Science, Harbin University of
Science and Technology, Heilongjiang, Harbin, China
ABSTRACT: At room temperature, we make a vertical typeZnO thin film transistor with the structure of Al/
ZnO/Ni/ZnO/Al. The ZnO thin film transistorhas the advantages offast reaction speed,low operating voltage
andhighcarrier mobility. Volume of Transistor is smaller than that of MOSFET and its operating current (IDS)
can reach milliampere and the gate electrode can ...