
562
Index
Fowler-Nordheim Tunneling 425
Free electrons 32
Full Wilson 81, 246, 247
Fullagar, David 4, 283
G
Gain error 438
Gate terminal:
JFET 140
DMOS 187
MOS 205, 211
Gate charge MOSFET 215
Gate-source threshold voltage V
GS(th)
211
General Electric Co. (G.E.) 31, 48, 233, 234
General Instrument Co. (G.I.) 185, 186
General Micro-Electronics Co. (GMe) 185,
186
General purpose BJT Duals and Quads 133
Germanium (Ge) 31, 33, 35, 36, 39, 47, 48,
68
Gifford, Jack 3, 282
Gm:
BJT 67
JFET 148
DMOS 194
MOS 214
Grades 299, 328, 360, 414, 434, 436
Grown junction transistor 47
H
Harris Semiconductor Co. 131, 186, 233,
234
Hasselblad Co. 234
Heiman, Fred 185, 203
Herzog, Jerry 231 ...