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Chapter 7
Creating Medium-Power Current Sources with DMOS FETs
After Dr. Shockley invented the basic junction FET at Bell Labs in 1952, several
years elapsed during which time the epitaxial process was also developed there. In
1958, Bell Labs’ researchers invented photolithography, which allowed more com-
plex devices to be created and eventually ICs. Another important milestone was
reached in 1960, when yet another Bell Labs’ researcher, Dr. John Atalla, developed
the first metal-gate MOSFET. However, it was more of a lab curiosity and not too sta-
ble. Just before this in 1959, Dr. Jean Hoerni, a co-founder of Fairchild Semiconduc-
tor, inv