
64
Characteristics of the BJT
Table 4.2 shows various collector currents and related V
BE
s based on this relationship
expressed in equation 4.23.
Table 4.2 The Relationship between V
BE
versus I
C
V
BE(sat)
is usually specified on a transistor’s data sheet at a particular base current
and collector current and can be measured as shown in Figure 4.15 (which is the
same circuit for testing V
CE(sat)
). For example, at 25˚C the popular 2N3904 NPN gen-
eral-purpose transistor has a V
BE(sat)
specification of 0.65 volt minimum to a maximum
of 0.85 volt, at a base current of 1 mA and a collector current of 10 mA. With a 5-mA
base current and a collector current of ...