The power circuit of the three-phase VSI is shown in Fig. 6.23(a). The power circuit of this inverter is implemented using insulated gate bipolar transistors (IGBTs); however, other semiconductor switches can be used depending on the power and switching characteristics of the inverter. Moreover, this inverter consists of three half-bridge inverters, which are connected in parallel and have the same phase output voltages with a phase difference of 120°. Therefore, for the specific inverter topology, the following equations hold:
(6.27)
Figure 6.23 Three-phase ...
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