November 2016
Intermediate to advanced
1008 pages
27h 59m
English
In this chapter, the most popular fully controlled Si semiconductor devices, such as bipolar junction transistors (BJTs), metal-oxide-semiconductor field effect transistors (MOSFETs), insulated gate bipolar transistors, gate turn-off thyristors, and MOS-controlled thyristors are presented and examined. For each semiconductor device, the I–V characteristics, the forward bias safe operating area, the reverse bias safe operating area, the dynamic switching characteristics, and the gate driving circuits are examined. Newly developed SiC semiconductor devices such as junction field effect transistors (normally-on and normally-off), MOSFETs, and BJTs are also presented. Protection circuits such as snubbers ...
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