March 2014
Intermediate to advanced
624 pages
26h 33m
English
3.1 Calculate the approximate donor binding energy for GaAs .
3.2 Calculate values for the Fermi function f(E) at 300 K and plot vs. energy in eV as in Fig. 3–14 . Choose EF = 1 eV and make the calculated points closer together near the Fermi level to obtain a smooth curve. Notice that f(E) varies quite rapidly within a few kT of EF. Show that the probability that a state ΔE above EF is occupied is the same as the probability that the state ΔE below EF is empty.
3.3 An unknown semiconductor has Eg = 1.1 eV and Nc = Nv. It is doped with 1015 cm–3 donors, where the donor level is 0.2 eV below Ec. Given that EF is 0.25 eV below Ec calculate ni and the concentration of electrons and holes in the semiconductor ...