Solid State Electronic Devices, 7th Edition

Problems

1. 3.1 Calculate the approximate donor binding energy for GaAs $({\text{ϵ}}_r=13.2,m_n^{*}=0.067m_0)$.

2. 3.2 Calculate values for the Fermi function f(E) at 300 K and plot vs. energy in eV as in Fig. 3–14 . Choose E_F = 1 eV and make the calculated points closer together near the Fermi level to obtain a smooth curve. Notice that f(E) varies quite rapidly within a few kT of E_F. Show that the probability that a state ΔE above E_F is occupied is the same as the probability that the state ΔE below E_F is empty.

3. 3.3 An unknown semiconductor has E_g = 1.1 eV and N_c = N_v. It is doped with 10¹⁵ cm^–3 donors, where the donor level is 0.2 eV below E_c. Given that E_F is 0.25 eV below E_c calculate n_i and the concentration of electrons and holes in the semiconductor ...