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Solid State Electronic Devices, 7th Edition
book

Solid State Electronic Devices, 7th Edition

by Ben Streetman, Sanjay Banerjee
March 2014
Intermediate to advanced content levelIntermediate to advanced
624 pages
26h 33m
English
Pearson
Content preview from Solid State Electronic Devices, 7th Edition

Problems

  1. 5.1 A 900-nm oxide is grown on (100) Si in wet oxygen at 1100°C (see Appendix VI). How long does it take to grow the first 200 nm, the next 300 nm, and the final 400 nm?

    A square window (1 mm × 1 mm) is etched in this oxide, and the wafer is reoxidized at 1150°C in wet oxygen such that the oxide thickness outside of the window region increases to 2000 nm. Draw a cross section of the wafer and mark off all the thicknesses, dimensions, and oxide-Si interfaces relative to the original Si surface. Calculate the step heights in Si and in the oxide at the edge of the window.

  2. 5.2 When impurities are diffused into a sample from an unlimited source such that the surface concentration N 0 is held constant, the impurity distribution (profile) ...

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Publisher Resources

ISBN: 9780137577866