Solid State Electronic Devices, 7th Edition

Problems

1. 5.1 A 900-nm oxide is grown on (100) Si in wet oxygen at 1100°C (see Appendix VI). How long does it take to grow the first 200 nm, the next 300 nm, and the final 400 nm?

   A square window (1 mm × 1 mm) is etched in this oxide, and the wafer is reoxidized at 1150°C in wet oxygen such that the oxide thickness outside of the window region increases to 2000 nm. Draw a cross section of the wafer and mark off all the thicknesses, dimensions, and oxide-Si interfaces relative to the original Si surface. Calculate the step heights in Si and in the oxide at the edge of the window.

2. 5.2 When impurities are diffused into a sample from an unlimited source such that the surface concentration N ₀ is held constant, the impurity distribution (profile) ...