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Solid State Electronic Devices, 7th Edition
book

Solid State Electronic Devices, 7th Edition

by Ben Streetman, Sanjay Banerjee
March 2014
Intermediate to advanced content levelIntermediate to advanced
624 pages
26h 33m
English
Pearson
Content preview from Solid State Electronic Devices, 7th Edition

6.6 Advanced Mosfet Structures

6.6.1 Metal Gate-High-k

As described above, the Si MOSFET with thermally grown SiO2 gate dielectric with its high-quality interface, and heavily doped polysilicon gate electrode has been the workhorse in this field for decades. However, due to the problems of tunneling leakage currents in ultra-thin SiO2 gate dielectrics, in recent years there has been a shift to high-k gate dielectrics such as HfO2 which can be made physically thicker without sacrificing gate capacitance, Ci = ϵi/d. Generally, higher dielectric constant materials have lower band gaps than SiO2. Hence, the band offsets in the conduction and valence bands may also be lower between these high-k gate dielectrics and Si. Thus, while the gate dielectric ...

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Publisher Resources

ISBN: 9780137577866