March 2014
Intermediate to advanced
624 pages
26h 33m
English
As described above, the Si MOSFET with thermally grown SiO2 gate dielectric with its high-quality interface, and heavily doped polysilicon gate electrode has been the workhorse in this field for decades. However, due to the problems of tunneling leakage currents in ultra-thin SiO2 gate dielectrics, in recent years there has been a shift to high-k gate dielectrics such as HfO2 which can be made physically thicker without sacrificing gate capacitance, Ci = ϵi/d. Generally, higher dielectric constant materials have lower band gaps than SiO2. Hence, the band offsets in the conduction and valence bands may also be lower between these high-k gate dielectrics and Si. Thus, while the gate dielectric ...